FEP(F,B)6AT thru FEP(F,B)6DT
Vishay General Semiconductor
Document Number: 88598
Revision: 07-Nov-07
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1
Dual Common-Cathode Ultrafast Rectifier
FEATURES
? Glass passivated chip junction
Ultrafast recovery time
Low switching losses, high efficiency
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix
for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
6.0 A
VRRM
50 V to 200 V
IFSM
75 A
trr
35 ns
VF
0.975 V
TJ
max. 150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
FEP6xT Series
ITO-220AB
FEPB6xT Series
PIN 1
PIN 2
K
HEATSINK
1
32
1
2
K
FEPF6xT Series
PIN 2
PIN 1
PIN 3
TO-263AB
3
1
2
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL FEP6AT FEP6BT FEP6CT FEP6DT UNIT
Maximum repetitive peak reverse voltage VRRM
50 100 150 200 V
Maximum RMS voltage VRMS
35 70 105 140 V
Maximum DC blocking voltage VDC
50 100 150 200 V
Maximum average forward rectified current at TC
= 105 °C I
F(AV)
6.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
75 A
Operating storage and temperature range TJ, TSTG
- 55 to + 150 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
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